发明名称 METHOD OF COATING CHEMICAL DEPOSITION LAYER ON SEMICONDUCTOR SUBSTRATE AND REACTOR USING THEREFOR
摘要 PURPOSE:To prevent a reactive product from accumulating on the inner wall of a reaction vessel by forming a heat beam transmitting partition plate between a heat source and the wall of the vessel, and providing cooling blowing means at both the heat source and vessel sides. CONSTITUTION:A partition plate 1 is formed of a material having excellent heat resistance and heat beam transmitting property, surrounded coaxially with a reaction vessel 101 in a tubular shape, mounted separately from the vessel 101 to partition between a heat source 102 and the vessel. One air flow 2 is interrupted by the plate 1 through the side of the source 102 externally of the source 102, and falls along the surface. The other air flow 12 is injected from above to a gap between the plate 1 and the side wall of the vessel 101 to fall.
申请公布号 JPS61147521(A) 申请公布日期 1986.07.05
申请号 JP19840268413 申请日期 1984.12.21
申请人 TOSHIBA CORP 发明人 KUBOTA HIROYASU
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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