| 摘要 |
PURPOSE:To reduce the time elapsing deterioration by a method wherein a gate insulating film and an interelectrode insulating film of thin film transistor arranged with each other conforming to coplanar structure are formed on an insulating substrate by means of anode oxidizing process. CONSTITUTION:A passivation film 2 and a semiconductor layer 1 for etching the layer 3 only into specified shape. Next a metallic layer serving as a power supplying wire, a source electrode 4 and a drain electrode 5 is patterned. Then an oxide film 6 with arbitrary thickness is formed by immersing the metallic layer in electrolyte for anode oxidation. Later a coplanar type thin film transistor for various thin type display may be produced by means of forming an anode oxide insulating film 7, an interelectrode insulating film 8 and a gate electrode 9. |
