| 摘要 |
PURPOSE:To reduce the parasitic capacity between base and collector by a method wherein base electrodes and outer base regions are selfmatchingly formed without mask fitting to an emitter region. CONSTITUTION:An epitaxially grown wafer is composed of n-type layers 8-10, a p-type layer 11, n-type layers 12, 13. Firstly a masking material 14 is formed in an emitter region to be etched and then Mg ion 15 is implanted utilizing the masking material 14 to form an outer region 16 for leading out a base electrode 22. Secondly another masking material 18 is formed along the sidewalls of masking material 14 to form high resistant regions 21 to isolate a base by ion-implanting boron. Later a hetero junction bipolar transistor may be complet ed by means of forming base electrodes 22 removing the masking materials 14, 18 and forming an emitter region 23.
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