| 摘要 |
PURPOSE:To prevent the generation of unsatisfactory contact by a method wherein, when an interlayer film is going to be flattened using phosphorus glass, plasma nitride film is buried in a contact hole part in advance, and phosphorus is diffused on the surface of a diffusion layer when said interlayer film is flattened. CONSTITUTION:After diffusion layer 203 and 204, a gate electrode 207 and the like are formed on a silicon substrate 200, an interlayer film 208 consisting of phosphorus glass is formed on the whole surface. Then, a contact hole 209 is formed on the corresponding part of the diffusion layer of said interlayer film 208, and a plasma nitride film 211 is formed in the contact hole. Subsequently, the interlayer film 208 is flattened by performing a heat treatment under the above-mentioned state. Then, the plasma nitride film 201 formed in the contact hole is removed by a phosphoric acid solution. |
