| 摘要 |
PURPOSE:To improve the frequency characteristics while reducing the interval between base and emitter by a method wherein an insulating film is selfmatchingly formed between the first metallic silicide film formed on an emitter layer through the intermediary of a silicon film and the second metallic silicide film on a base layer. CONSTITUTION:An n<+> type collector buried layer 2 and an n<-> type epitaxial layer 3 are formed on a p-type silicon substrate 1. A p-type base layer is com posed of an outer layer 52 and an active base layer 62. An n-type emitter layer 71 is formed on the layer 62. A polysilicon film 603 comprising p-type impurity led therein is formed on the layer 71. Then metallic silicide films 501, 502 are respectively formed on the layer 52 and the film 603 while the films 501, 502 are insulated by an oxide film 105. Through these procedures, the base resistance may be reduced remarkably since the film 501 connecting to a base electrode wiring 9 extends to the part near layer 71.
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