发明名称 DRY ETCHING DEVICE OF SEMICONDUCTOR WAFER
摘要 PURPOSE:To etch in uniform reaction gas atmosphere by providing flow rate regulating means in reactive gas intake and exhaust tubes. CONSTITUTION:Flow rate regulators 6-1, 6-2, 6-3, 6-4 are respectively provided in gas intake tubes 3-1, 3-2, 3-3, 3-4. Flow rate regulators 7-1, 7-2, 7-3 are respec tively provided in gas exhaust tubes 4-1, 4-2, 4-3. The reaction gas in a reaction chamber 2 is equalized by suitably regulating the regulators 6-1, 6-2, 6-3, 6-4, 7-1, 7-2, 7-3.
申请公布号 JPS61147529(A) 申请公布日期 1986.07.05
申请号 JP19840270059 申请日期 1984.12.21
申请人 TOSHIBA CORP 发明人 KONO KENJI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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