| 摘要 |
PURPOSE:To obtain a rectifying element, which responds promptly and has excellent rectifying characteristics, by a method whrerein the main surface on one side of a silicon substrate is provided with a polycrystalline silicon layer containing oxygen in 10-30atom% and an electrode, which is laminatedly formed on the polycrystalline silicon layer. CONSTITUTION:An oxygen-doped polycrystalline silicon layer 1 contains oxygen in 10-30atom% and is formed by adhesion on a silicon substrate 101 in a layer thickness of 1000Angstrom or more. A silicon oxide layer 2 is mode to coat on the main surface of the layer 1, an opening for electrode arrangement is provided on the oxide layer 2 and a gate-side electrode 3 to be made of alumina is provided on the exposed surface of a part of the oxygen doped polycrystalline silicon layer 1, where is located in the opening. Moreover, an impurity of the same conductive type as that of the substrate 1 is diffused from the inverse main surface of the silicon substrate 101 to form a contact-bonding n<+> type layer 104 and a collector electrode 105 is formed. |
