| 摘要 |
PURPOSE:To obtain a stable semiconductor laser with good characteristics by a method wherein, before an irregular processing is performed, the luminescent mechanism part is formed of an organic metal of an AlGaInP semiconductor or by the metal vapor-phase growth method. CONSTITUTION:A buffer layer 22, a first clad layer 23, an active layer 24 and a second clad layer 25 are made to grow in order on the main surface of an n-type GaAs single crystal substrate 21, and further successively, a protective semiconductor layer 26 for the second clad layer 25 is made to grow on the second clad layer 25 and a current constricting layer 27 is made to grow there on. The buffer layer 22, the first clad layer 23 and the current constricting layer 27 have the same n-type conductive type as that of the substrate 21, and the second clad layer 25 and the protective semiconductor layer 26 for the second clad layer 25 have the p-type conductive type inverse to the n-type conductive of the substrate 21. An electrode 29 on one side is ohmically formed by adhesion on a cap layer 28 and an electrode 30 on the other side is ohmically formed by adhesion on the back surface of the substrate 21.
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