| 摘要 |
PURPOSE:To improve the static breakdown strength without changing electric characteristics by means of forming planar shape of Schottky junction into ring type. CONSTITUTION:Schottky junction 2 of Schottky barrier diode is formed so that e.g. a passivation film 4 removed by etching process on a silicon substrate 3 may be partially covered with Schottky barrier metal 5 formed into ring type. The junction 2 is formed into a plane arranged with stereo type double circles. The electric field intensity (E) and the current density (J) in the ambient parts of Schottky junction 2 are reduced in inverse proportion to the ambient length. Resultantly the static energy in Schottky junction region may be diminished by scattering to improve the static breakdown strength. |
