| 摘要 |
PURPOSE:To prevent the rise in substrate potential when it is in an open state, by a method wherein a resistance element is connected between a semiconductor substrate and a grounding terminal in a condition to be arranged parallel to a P-N connection formed on a substrate. CONSTITUTION:Thick oxidized films 17-19 for interelement separation are formed on a type P Si substrate 1, and N<+> regions 2 and 3 are formed on the substrate 1 surrounded with the films 17 and 18. An electrode 13 is mounted through the medium of a gate oxidation film 9 between the regions 2 and 3 to form an MIS transistor Q1. Type N<+> regions 4-6 are formed also between the films 10 and 18, and a transistor Q3 consists of the regions 4 and 5 and a gate electrode 14 formed through the medium of a gate oxidation film 10. A transistor Q4 consists of the regions 5 and 6 and a gate electrode 15 formed through the medium of a gate oxidation film 11, and the region below the film 18 is used as a transistor Q2. With this a type N resistance element 28 of about 1kOMEGA is formed at the end of the substrate 1, and opposite ends thereof are connected to the regions 3, 6 and the substrate 1. |
