| 摘要 |
PURPOSE:To suppress surface movement of absorbed atoms and selectively form a semiconductor thin film by combining different kinds of atoms to the uncombined hand of atom exposed at the surface of semiconductor substrate. CONSTITUTION:The atoms at the silicon surface from where the natural oxide film 2 is etched has the uncombined hand and is in the condition as easily absorbing atoms. Therefore, when the fluorine gas F2 is sprayed to the silicon surface, the surface can easily be covered with the Si-F combination. The ambience is changed to the silane gas, the ArF laser beam 4 is condensed to the surface of silicon substrate 1 in order to separate the F atoms absorbed to the surface and accelerate reaction between the silane gas and silicon substrate at the surface and the silicon atom 3 is deposited in the irradiation region. At the unirradiated region, the F atoms are still absorbed, spreading of atoms is suppressed by the surface movement of silicon atom 3 and the silicon atoms are deposited only at the irradiated region. |
