| 摘要 |
PURPOSE:To enable the prevention of blooming when a device is made to be of high density, by making buried channel regions have a shape in which they are surrounded by single-conductivity type semiconductor regions. CONSTITUTION:The titled change coupled device is provided with N-type buried channel regions 22-24 formed on a P-type semiconductor substrate 21, and with overflow drain regions 27 and 28 which operate as N<+> type excess charge absorbing regions having a high impurity concentration. The buried channel regions 22-24 have a shape in which they are surrounded by a P-type semicon ductor region which comprises P-type semiconductor regions 29-31 provided between the upper sides of said buried channel regions 22-24 and the surface of the semiconductor substrate 21, and said semiconductor substrate 21. |
