| 摘要 |
PURPOSE:To provide low resistance to a ZnSxSe1-x (0<=x<=1) epitaxial layer grown on a substrate, by a method wherein a III family element which is represented by Al is doped in a crystal to be provided with low resistance beforehand, and the skipped section of Zn is covered with high-purity ZnSxSe1-x. CONSTITUTION:Zinc (Zn) is coated on one main surface of the selenic zinc sulfide grown on a substrate, then the surface of the zinc is coated with selenic zinc sulfide and heat-treated in an atmosphere of inert gas, H2 gas or the same selenic zinc acide saturation vapor as that for the final layer. For example, the Al.doped ZnS single crystal 12 grown on a GaP 11 is washed with a organic solution. Approx. 5,000Kt of plate-shaped zinc Zn 13 and then approx. 6,000Kt of powdered zinc sulfide (ZnS) 14 with 99,9999% purity as a cover layer are successively evaporated on that surface. Then, the substrate is placed in a quartz boot where Ar gas is flowed and heat-treated at the temperature of 800 deg.C. When the substrate is taken out after 1hr has passed, and exposed to HCl:H2O=1:1 for about 30sec, then the zinc and zinc sulfide are samultaneously removed, and the ZnS:Al layer is lightly etched. |
