| 摘要 |
PURPOSE:To use all X-ray exposure masks corresponding to the X-ray of different wavelengths with the same apparatus by providing at least a plurality of different kinds of targets in combination with electron gun and causing the electron beam to selectively enter any one of targets. CONSTITUTION:The first and second targets 11, 12 being arranged in the axial direction of the same plane and consisting of different materials are used. The electron beam 14 generated from an electron gun 13 is deflected by a deflector 15 and enters the one first target 11, irradiating a semiconductor substrate through the X-ray exposure mask with the characteristic X-ray 16. Thereby the pattern on the X-ray exposure mask can be transferred to by exposure on the semiconductor substrate. As shown by an arrow mark, when the electron beam 14 is caused to enter the second target 12 by inserting the second target 12 to the position of first target 11 and then moving it, similar transfer exposure can be done since the X-ray axis does not change here. |
