发明名称 |
METHOD FOR PHOTOLITHOGRAPHIC PATTERN GENERATION IN A PHOTORESIST LAYER |
摘要 |
With the method, in which the photoresist is exposed to radiation more than once, a hole pattern corresponding to the pattern of openings (15, 16) of an exposure mask (14) as well as a hole pattern corresponding to the negative of the pattern of openings (28, 29, 30) of another exposure mask (25) are sequentially produced ink a single photoresist layer (12). The method is used e.g. in forming holes (23, 24) defined by the positive image into an oxide layer (11) on a substrate (10), and in producing a metallization pattern (36a, 36b) defined by the negative image for interconnecting areas of the substrate (10). |
申请公布号 |
DE3271354(D1) |
申请公布日期 |
1986.07.03 |
申请号 |
DE19823271354 |
申请日期 |
1982.07.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABRAHAMOVICH, KAREN MARIE;HAMEL, CLIFFORD JOSEPH;PAYNE, EDWARD HENRY;WEED, DEAN ROBERT |
分类号 |
H01L21/30;G03F7/00;G03F7/20;G03F7/26;H01L21/027;H01L21/306;(IPC1-7):H01L21/312;H01L21/308 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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