SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a diffusion layer in the semiconductor substrate thereof; and an insulation layer is formed on the semiconductor substrate and is provided with a contact window therein, so as to electrically connect a conductive metal layer with the diffusion layer composed of Si atoms as a base material. A Si atom supplier is formed close to the contact window at the area where the Si atoms diffuse into the conductive metal layer. Preferably, the Si atom supplier comprises a dummy contact window similar to the above-mentioned real contact window.