发明名称 CONNECTING METHOD FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To eliminate defective insulation between solder bumps due to increase of a number of component elements by covering the bump of elements with a heat resistant insulation layer, except for solder balls. CONSTITUTION:Deformation of solder ball 3 when it is fused by heat processing is restricted by burying the solder bumps with an insulation layer 8 having heat resistivity such as polyimide and silicon dioxide and thereby insulation between solder bumps can be acquired. Even when distance between the solder bumps is reduced due to the change toward higher capacity such as from LSI to VLSI, abnormal deformation in the lateral direction of solder can be suppressed and thereby failure by short-circuit can be eliminated and generation of defective products can be eliminated in the semiconductor chip manufacturing process.
申请公布号 JPS61145838(A) 申请公布日期 1986.07.03
申请号 JP19840269219 申请日期 1984.12.20
申请人 FUJITSU LTD 发明人 YOKOUCHI KISHIO;SUZUKI YUICHI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址