| 摘要 |
PURPOSE:To continuously realize heat processing and characteristic inspection processing and form a shallow junction by boring a hole which reaches the one main surface of substrate before the heat processing and after arrangement of diffusion source and employing the lamp heat annealing method for the heat processing. CONSTITUTION:In a method for selectively diffusing desired impurity from one main surface of the substrate by forming a mask having an aperture 3 to the one main surface of a semiconductor substrate, arranging a solid phase diffusion source 5 to the one main surface of substrate exposed at least by aperture and executing the heat processing, an aperture 7 for contact with a base region 1 before the heat processing is formed previously. Thereby, the characteristic inspection of transistor can be done immediately after the heat processing. Moreover, since fine adjustment of diffusion depth can be done easily by employing the lamp heat annealing, a transistor having specified characteristic can be obtained by gradually deepening the emitter region 6 while the diffusion and character inspection are repeated. |
