发明名称 |
IMPROVED ECL BIPOLAR MEMORY INTEGRATED CIRCUIT STRUCTURE |
摘要 |
An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of the memory transistors in the flip-flop circuit to bit lines using Schottky diodes to protect against latch-up of the ECL cell; and the inversion of the transistors in the circuits to provide a buried emitter construction for alpha strike protection. In a preferred embodiment, the Schottky diode and the load devices, such as resistors or load transistors used to coupled the cell to one of the word lines are made using polysilicon to facilitate construction of the cell, reduce the total number of contacts needed, and enhance the speed of the cell. |
申请公布号 |
JPS61145858(A) |
申请公布日期 |
1986.07.03 |
申请号 |
JP19850286860 |
申请日期 |
1985.12.17 |
申请人 |
ADVANCED MICRO DEVICDS INC |
发明人 |
MAMON TOOMASU;UEN SHII KOU |
分类号 |
H01L27/082;G11C11/411;H01L21/285;H01L21/8222;H01L21/8229;H01L27/10;H01L27/102 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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