| 摘要 |
PURPOSE:To minimize non-controlable epitaxial growth within a time difference between stop of inflow of growth gas when the epitaxial growth terminates and perfect exhaustion of residual gas by providing at least on a gas inflow hole for purging and exhaustion hole at the area between epitaxial growth gas inflow hole and epitaxial growth region. CONSTITUTION:At lease one gas inflow hole 17 for purging, in addition to a gas inflow hole 11 and at least one second exhaustion hole 18, in addition to a first exhaustion hole 15, are respectively provided between the reaction and growth zones having an inflow hole 11 and susceptor 13. At the specified epitaxial growth end point, a gas for purging is supplied from the inflow hole 17 together with the inflow hole 11, and the growth gas remaining in the reaction tube 12 is exhausted at a time from the second exhaustion hole 18 in addition to the first exhaustion hole 15. Namely, the gas for purging supplied from the inflow hole 17 works as a gas curtain which dividingly exhausts the gas for residual growth in the vicinity of susceptor 13, minimizing epitaxial growth on a substrate 16. |
