| 摘要 |
PURPOSE:To reduce the area of a chip and to miniaturize the gate length, etc. by laminating a semiconductor layer consisting of three layers on a dielectric, and forming a gate vertically so as to consturct a MOST. CONSTITUTION:A MOS integrated circuit consists of an Si substrate 1, SiO2 oxide film 2, a source electrode 3, an n<+> type Si layer 4, a p type Si layer (back gate region) 5, an n<+> type Si layer 6, a drain electrode 7, a gate oxide film 8, a gate electrode 9, back gate electrode 10, and electrode separation dielectrics 11-14. The electrode 7 is applied positive voltage, and the electrode 3 and the back gate 5 are connected to the GND. When electrode 9 is applied a positive voltage exceeding a threshold, a channel reversed to an n type is formed on the interface between the Si layer of the back gate 5 and the gate oxide film 8 so that a drain current flows from the electrode 7 to the electrode 3 and the back gate 5. On the other hand, when the voltage at the electrode 9 drops below the threshold, the drain current will not flow any more. |
