| 摘要 |
PURPOSE:To prevent a semiconductor device from being subjected to the effect of a charge storage phenomenon by a method wherein a charge is prevented from being stored on the wire ball forming part and the members of the semiconductor part. CONSTITUTION:An insulating member 4 and a conductive member 5 are pro vided under the lower surface of a torch 3 and the members 4 and 5 are earthed. For that, even when a high voltage is impressed in between the torch 3 and a wire 1 at the time of wire ball formation, a charge, which is stored on a semiconductor 7 by the voltage impressed, is immediately earthed. Moreover, when a conductive member 8 is provided on the upper surface of the semiconduc tor 7 and the conducture member B is earthed, even a finc voltage leaked can be eliminated. Furthermore, an irradiation 12 of ultraviolet rays or ozones is performed in between a bonding part 10 and a stoker 11 and a charge is erased. According to this constitution, a charge storage phenomenon to generate at the time of bonding can be prevented and the effect of the phenomenon to the semiconductor device can be prevented. |
