| 摘要 |
PURPOSE:To contrive to improve resisting pressure of a semiconductor element and to stabilize the same by means that max. impurity density is lowered to the value less than that at the middle part by a method wherein the thickness of outside peripheral section of a low resist semiconductor layer, which forms a beveled structure by p-n junction, is made larger than that at the middle part of a low resister layer. CONSTITUTION:A p type emitter region 3 and a guard region 1 are formed by means of diffusion of B etc. to the both faces of an n type high resist semiconductor substrate and a p type gate region 4 is formed by diffusion method, then n type regions 5, 7 is formed thereon by epitaxial growth method, also an n type emitter region 6 is formed on the n type region 5. A gate electrode 10 is formed digging in the surface of the gate region 4 by etching method, then an anode electrode 8 is formed on the surface of the region 3. The positive heveled structures 13, 14 are formed onto p-n junctions 11, 13 sandblasting the outside peripheral section of the semiconductor and then are finished by chemical etching. The thicknessof the region 1 is made thicker than that of the region 4, thus high pressurization is realized on the outside peripheral surface of p-n junction by means of remaining the region 7 at the outside section of the element. |
