| 摘要 |
PURPOSE:To make the parasitic resistance subsequent to the electric current concentration 0 at the silicide contact part, by a method wherein the silicide contact part is formed on the whole two vertical side of a Si film resistance body so that the electric current concentration may not occur at the contact part. CONSTITUTION:An Si substrate 1 and a polycrystal Si film resistance body 3 are electrically separated by an SiO2 film 2, and the upper surface of resis tance body is covered by a film 4. An opening 5 for an electrode is provided on a film 4 near both ends of this resistance body 3, and at this part the resistor 3 is replaced with a platinum silicide 9. The interface 10 of this silicide 9 and the resistance body 3 is nearly perpendicular to the interface of the resistance body 3 and the film 4. The silicide 9 is connected to an Al electrode wiring 6 at the opening part. This silicide 9 is a material having small electric resis tance rate, and a metallic electrode wiring 12 seems to have nearly the same electric patential. Accordingly, the electric concentration does not occur, and the parasitic resistance subsequent to this does not exist. |
