| 摘要 |
PURPOSE:To increase the operation speed in comparison with a integrated circuit device consisting of a conventional TFT, by a method wherein more than 2 channel region using source, drain and gate electrodes in common are formed parallel. CONSTITUTION:A TFT consists of a semiconductor layer 11, a gate electrode 12, source and drain regions 13 and 13', and contact holes 14, 14' and 15 with source, drain and gate electrodes. A channel consists of the semiconductor layer 11 and 11', and the two channels line parallel and are connected to the source 13 and drain 13' and use the gate electrode 12 in common. The length of the channel is indicated by (l), and the width of the channel is indicated by the with w1+w2(=w) where two parallel channel are added. ON current is increased by forming more than 2 channel region parallel. |
