| 摘要 |
PURPOSE:To prevent the reduction of the characteristics when an optoelectric transducer is used at high-temperature, by providing a silicide forming element layer with specified thickness between a semiconductor and at least other elec trode. CONSTITUTION:A p-layer, an i-layer, an an n-layer made of amorphous Si are formed on a transparent substrate provided with a transparent electrode. Then, Cr which is one of the silicide constituting elements is evaporated to the thickness of 5-100Angstrom . Then, a back side electrode is laminated and heat- treated for 0.5-4hr at the temperature of about 180 deg.C to transform it to silicide so as to improve the contact with the back electrode and Si layer, thereby providing a heatproof, thin film, optoelectric transducer. |
