| 摘要 |
PURPOSE:To prevent any crack from generating in the wire connecting region and the insulating film on the peripheral part thereof by a method wherein interpenetrated holes through the upper and lower insulating films are provided in the periphery of the metal pad or in a part of the wiring between the metal pad and the element region. CONSTITUTION:An opening is provided on an SiO2 film 9 on an Si substrate 7, an Al wiring 10 is provided in connection to a diffusion layer 8, the point 10a thereof is formed into a circular form and numerous penetrated holes 10b are formed in the vicinity of the junction region. The wiring 10 is covered with a PSG film 11, openings 13 are provided and parts of the circular wiring part 10a are made to expose. The penetrated hole part 10b is made the strength thereof increase by a superposition of the films 9 and 11. The openings 13 are completely covered with the Au ball part 14a of a junction conductor 14. At this time, when the part 10a and the penetrated hole part 10b are pressed with a capillary 15, the part 10a is expandedly prolonged and the penetrated hole part 10b is not expandedly prolonged. As a result, the stress to generate in the PSG film 11 is made to disperse and the generation of a crack in the PSG film 11 decreases. |
