| 摘要 |
PURPOSE:To obtain a high speed light receiving device of long size and large area and a light-emitting device with which a light of arbitrary wavelength can be emitted in a high degree of efficiency by a method wherein the first thin film, which is single crystallized by fusion and solidification, is coated on an insulated substrate, and the second compound semiconductor thin film, to be used for formation of an active element, is epitaxially grown on the first thin film. CONSTITUTION:The first thin film 11 consisting of Si, Ge or the mixed crystal of them and having low vapor pressure when it is fused, is coated on a high melting point insulative substrate 10 of SiO2, Al2O3 and the like, and a protective film 12 is coated on the exposed surface of said thin film 11 for the purpose of preventing deformation of the thin film of SiO2, Si3N4, Al2O3 and the like. Then, the film 11 is single-crystallized by irradiating the energy ray 13 of a laser beam such as Ar, ruby and the like, an electron beam, a heat ray and the like, the film 12 is removed, the second compound semiconductor thin film such as GaAs, AlAs, GaP, InAs and the like is deposited on the film 11 by performing an epitaxial growing method, and an active element is provided thereon. Through these procedures, a light source array suitable for self-light emitting type display is obtained. |
