High-speed semiconductor device.

摘要

A high-speed semiconductor device comprising an emitter potential barrier layer (2) disposed between an emitter layer (1) and a base layer (3), a collector layer (5), and a collector potential barrier layer (4a) disposed between the base layer (3) and the collector layer (5). The collector potential barrier layer (4a) has a structure having a barrier height changing from a high level to a low level along the direction from the base layer (3) to the collector layer (5), whereby, even when no bias voltage is applied between the collector layer (5) and the emitter layer (1), a collector current can flow through the device.