发明名称 RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING ITS COMPOSITION
摘要 PURPOSE:To enable a formation of a fine pattern by preparing the titled composition from a resist comprising a mixture of cis-(1,3,5,7-tetrahydroxyl)-1,3,5,7- tetraphenylcyclotetrasi-loxane and a specific polysilsesquioxane and a phenolic resin soluble to an alkaline aqueous solution. CONSTITUTION:The resist is composed of 5-100wt% prescribed mixture and the phenol resin soluble to the alkaline aqueous solution. Said mixture consists of (A) cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasil-oxane and (B) polysilsesquioxane shown by the formula wherein R1 is a phenyl group and/or 1-4C alkyl group, a ratio of the phenyl group/the alkyl group is >=1, R2 is at least one of an element or a substituent selected from the groups of a hydrogen atom, the phenyl and 1-4C alkyl groups, the hydrogen atom is >=1/2 the whole R2 group.
申请公布号 JPS61144639(A) 申请公布日期 1986.07.02
申请号 JP19840266103 申请日期 1984.12.19
申请人 HITACHI LTD 发明人 UENO TAKUMI;SHIRAISHI HIROSHI;NISHIDA TAKASHI;HAYASHI NOBUAKI
分类号 G03C1/72;G03C1/00;G03C5/08;G03F7/008;G03F7/038;G03F7/075;G03F7/20 主分类号 G03C1/72
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