发明名称 |
Multilayer ohmic contact for P-type semiconductor and method of making same. |
摘要 |
<p>An ohmically conductive contact for a thin film p-type semiconductor compound formed of at least one of the metal elements of Class IIB of the Periodic Table of Elements and at least one of the non-metal elements of Class VIA of the Periodic Table of Elements comprises a first layer of copper (14) contiguous with said p-type semiconductor compound (13) and having a layer thickness of from about 5 Angstroms to about 50 Angstroms and a second layer (15) thereon comprising at least a second conductive metal. The layer (14) forms a stable ohmic contact with film (13) and layers (14) and (15) form a stable current collector. </p> |
申请公布号 |
EP0186350(A2) |
申请公布日期 |
1986.07.02 |
申请号 |
EP19850308872 |
申请日期 |
1985.12.05 |
申请人 |
SOHIO COMMERCIAL DEVELOPMENT CO.;BP PHOTOVOLTAICS LTD. |
发明人 |
BASOL, BULENT MEHMET |
分类号 |
H01L31/04;H01L21/28;H01L21/443;H01L21/445;H01L29/43;H01L29/45 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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