| 摘要 |
PURPOSE:To reduce the source and gate resistance by a method wherein an active layer and a gate electrode on a semiconductor substrate, and a contact region is formed with the electrode used as a mask, the whole surface is coated with a metallic film, Au is plated on the gate electrode which has been coated with resin and made to a film and exposed, and then unnecessary metallic film is removed. CONSTITUTION:Si ion is injected onto a GaAs substrate 11 to form an N-type active layer 12, the WSi gate 13 is formed. Si ion is injected with the gate 13 used as a mask to form a n<+> contact regions 14 and 15. A Ni film 20 is evaporated on the whole surface. The hole surface is coated with a photo-resist layer 21, and the layer is uniformly thinned to expose the upper surface of the gate 13. An Au plating layer 22 is formed on the upper surface, and then, the photo-resist layer 21 and the Ni film 20 outside of the gate 13 are removed to complete the gate electrode. An AuGeNi 19 is evaporated with the layer 22 used as a mask to form a source electrode 16, drain electrode 17, thereby completing an FET. |
