| 摘要 |
PURPOSE:To make it possible to detect the light with its different wavelengths being simultaneously differenciated, by a method wherein photo receivers with wavelength selection layers and different arreas, and an optical fiber corresponding to them are positioned on the main surface of a semiconductor. CONSTITUTION:The incident laser light 8 on an optical fiber 4 fixed on a celamic sleeve 5 of a cap 2 irradiated itself on a photo-receiving sections 7 on the photo receiver 6, and its output is taken out through a lead 9 mounted on a stem 1, and a wire 11. On the other hand, the photo-receiver 6 consists of p type Ga1-xAlxAs layers 17-19 formed on a GaAs substrate 15 with the liquid phase epitaxial method. The crystalline mixing ratio of Al, (x) satisfies the relation of a<b<c (a=0, b=0.2, c=0.4, etc) and differs in its transmissing wavelength regions. Therefore, the light with different wavelength regions can be differenciated by the photo receiving sections 7. |
