| 摘要 |
PURPOSE:To perform an etching process with high anisotropy by a method wherein a discharging system feeding etchant and another discharging system feeding inhibitor are made independently workable respectively to form a side wall protecting film in a reaction chamber. CONSTITUTION:An etchant discharging system 6 feeds a vessel 7 with CF4 etc. to produce plasma containing well-known active radicals or ions for irradiating a poly Si3 therewith to advance etching process. Simultaneously or alternately with said process, an inhibitor discharging system 13 feeds CH3 etc. to another vessel 14 for feeding plasma containing active radicals containing C to a reaction chamber 1. Through these procedures, a polymer (inhibitor) may be formed on a sample 3 to augment etching anisotropy as a sidewall protective film. In order to form the inhibitor, plasma containing active O and N may be produced making the plasma react to poly Si to form thermally stable Si-O or Si-N coupling as for an inhibitor. In such a constitution, an etching process with high anisotropy and precision may be performed. |
