| 摘要 |
PURPOSE:To improve the yield, by preventing a polymeric film from being formed by a gas used in the dry etching process and reducing the overetching of gallium arsenide, GaAs providing a substrate. CONSTITUTION:According to the present dry etching process, products obtained from a gas containing nitrogen trifluoride, NF3 are a fluoride (e.g., ReF) and a nitride (e.g. NF<+>2), which are all volatile materials. Therefore, the substrate can be uniformly etched without formation of an inactive film, which would be formed as a carbonic polymeric film if a conventional carbon fluoride is used. Further, since no inactive film is formed, it is not required additional oxygen during the etching process and therefore the overetching of GaAs can be substantially reduced. |
