| 摘要 |
PURPOSE:To increase the substantial areas of a GTO section and a RCD section, and to obtain sufficient current capacity and low ON voltage by disposing a gate electrode etc. formed at sections except for an isolation region onto the isolation region. CONSTITUTION:When a gate electrode section extracting a gate lead is shaped into an isolation region, an insulating film 21 is formed so that a gate electrode in a section up to a section where the gate electrode 17 for a GTO section is brought into contact with a second base layer 13 from the end of a RCD section is not brought into contact with the second base layer 13 and an N<+> layer 20 because the section functions as the isolation region. An On gate electrode 22 is shaped onto the isolation region on an application for an amplifying gate type reverse conduction GTO. That is, the insulating film 21 is formed onto the second base layer 13 in the isolation region and the N<+> layer 20, and the ON gate electrode 22 is shaped onto the insulating film and the gate lead is extracted. A second emitter layer 24 in an auxiliary GTO is formed to the GTO section adjacent to the ON gate electrode 22, and an electrode 23 connecting the second base layer 13 and the second emitter layer 24 in the auxiliary GTO is shaped onto the layer 34. |
