发明名称 BIAS CIRCUIT OF FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To keep the operation of an FET stable by providing a bypass circuit impressing a prescribed voltage to a gate while power is supplied. CONSTITUTION:If the operation of a DC stabilizing circuit 7 stops due to a fault during the operation of the FET2, the decrease in the gate voltage impressed to the gate of the FET2 is started. When the gate voltage reaches a setting value, an OFF signal is transmitted to a DC stabilizing circuit 5 from an identification circuit 14. The circuit 5 stops its operation and the decrease in the drain voltage impressed to the drain of the FET2 is started. On the other hand, the decrease in the gate voltage stops when the voltage reaches a prescribed value through the operation of a bypass circuit 11 and then the voltage is kept to a prescribed value. Even when the decrease in the drain voltage starts later than the reduction in the gate voltage, the FET2 has no effect due to the drain current.
申请公布号 JPS61144105(A) 申请公布日期 1986.07.01
申请号 JP19840265304 申请日期 1984.12.18
申请人 TOSHIBA CORP 发明人 MORIBE HIDETAKA;INOUE SHINICHI
分类号 H03F1/52;H03F1/30 主分类号 H03F1/52
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