| 摘要 |
<p>PURPOSE:To obtain a semiconductor device wherein an epitaxial layer is not stressed by forming the epitaxial layer which has a different latice constant from that of a substrate. CONSTITUTION:An epitaxial layer consisting of three layers, an In0.35Ga0.65Pn- clad layer 11, an In0.2Ga0.8As0.35P0.65 active layer 12 and an In0.35Ga0.65Pp-clad layer 13 formed on a GaAs substrate 10, is separated from a substrate 14 and made a semiconductor device with only epitaxial layers. The lattice constant of the epitaxial layer is 5.60Angstrom and the value is different from that of the GaAs substrate 14 approx. 1%. A semiconductor mixed crystal composition which has such a lattice constant is an In0.2Ga0.8As0.35P0.65 or an In0.35Ga0.65P, the mixed crystal composition is a direct transition type and a laser oscillation at 0.65mum is possible.</p> |
