发明名称 THIN FILM FORMATION
摘要 PURPOSE:To prevent a trouble that not decomposed and not reacted gas, e.g., silane, flowed to an exhaust system reacts with the atmosphere explosively preventing the flow of the reactive gas to the exhaust system by introducing the reactive gas in a vacuum reaction chamber for sealing. CONSTITUTION:In the case of exhausting a light source chamber 5, a heater 29 is provided to prevent mixing of a reactive gas by a counter flow, a component which is made a solid after decomposition in the reactive gas is trapped and only the gas is made to counter-flow. A load lock system is used to prevent the difference of pressure in a movement. That is, a substrate 1, a holder 1' and a holder 1'' for substrate and holder are inserted in a reserve chamber 4. After the chamber 4 is made a vacuum, a gate valve 6 is opened, the contents are moved to a reaction chamber 2, the gate valve 6 is closed again and the reaction chamber 2 and the reserve chamber 4 are partitioned. In an exhaust system 8, the reaction chamber 2 is opened for pumping to a vacuum and the reserve chamber is closed by a cock 20.
申请公布号 JPS61144014(A) 申请公布日期 1986.07.01
申请号 JP19840265973 申请日期 1984.12.17
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 C23C16/48;H01L21/205;H01L21/263;H01L31/04 主分类号 C23C16/48
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