CLOSED TUBE GETTERING

摘要

The present invention is directed to a process for improving certain electrical parameters of a power semiconductor device by gettering impurities during an initial closed tube diffusion. The gettering agent is a non-metallic chlorine compound which is disposed within a sealed quartz capillary and the sealed quartz capillary is disposed within a sealed quartz tube with a source of a suitable doping agent and wafers of a semiconductor material which are to be doped. The quartz tube is then disposed within a diffusion furnace and the gettering of impurities is carried out during the diffusion.