| 摘要 |
PURPOSE:To obtain a resist material superior in sensitivity and resolution and high in dry etching resistance by using a specified copolymer. CONSTITUTION:The resist material is enhanced in sensitivity by using the copolymer having the repeating units each having high energy sensitive group, such as vinyl or epoxy group, and at the same time, a phenyl structure represented by formula I, and also enhanced in dry etching resistance by incorporating the repeating units of formula II, each having a hetero ring in said copolymer. In formulae I and II, R is vinyl, epoxy, or the like; R1 is H, 1-6C alkyl, or halogen, and R, R1 substitute one of the o, m, and p-positions; each of W, X, Y, and Z is H, halogen, cyano, 1-6C alkyl, haloalkyl, or 6-30C substd. by 1-6C alkyl or haloalkyl, -COOR2, -COR2, or the like, nitro, or hetero ring substd. by H, OH, COOH, halogen, nitro, or the like; and R2 is 6-30C aryl or the like. |
