发明名称 METHOD AND APPARATUS FOR INCREASING THE DURABILITY AND YIELD OF THIN FILM PHOTOVOLTAIC DEVICES
摘要 This invention relates to a method and apparatus for detecting the location of shorting defects in thin film semiconductor layers. Thin film photovoltaic cells having a pair of semiconductor layers between opaque and a transparent electrical contacts are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.
申请公布号 CA1207069(A) 申请公布日期 1986.07.01
申请号 CA19830422343 申请日期 1983.02.24
申请人 UNIVERSITY OF DELAWARE (THE) 发明人 PHILLIPS, JAMES E.;LASSWELL, PATRICK G.
分类号 H01L31/04;G01R31/26;H01L31/18 主分类号 H01L31/04
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