发明名称 BIAS CIRCUIT OF FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To stabilize the operation of an FET by devising that the drain voltage is not applied unless a voltage being a value or over is applied to the gate so as to prevent the increase in the drain current. CONSTITUTION:When a negative power voltage reaches a setting value, an ON signal is transmitted from an identification circuit 10 to a synthesis circuit 12. When a gate voltage outputted from a DC stabilizing circuit 9 reaches a setting value, the ON signal is transmitted from an identification circuit 11 to the synthesis circuit 12. When the signals from identification circuits 10, 11 are both set ON, the ON signal is fed initially from the synthesis circuit 12 to the DC stabilizing circuit 5, from which the drain voltage starts outputting. Since the gate voltage is fed sufficiently in this case already, no effect is given onto the operation of the FET2.
申请公布号 JPS61144106(A) 申请公布日期 1986.07.01
申请号 JP19840265305 申请日期 1984.12.18
申请人 TOSHIBA CORP 发明人 MORIBE HIDETAKA;INOUE SHINICHI
分类号 H03F1/52;H03F1/30 主分类号 H03F1/52
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