发明名称 Semiconductor substrate and method for manufacturing semiconductor device using the same
摘要 A semiconductor substrate has a semiconductor substrate main body having a first major surface and a second major surface opposite thereto. At least one recess is formed in the second major surface. The recess defines a semiconductor element formation region between a bottom surface thereof and the first major surface of the substrate main body. Gettering of contaminant impurities such as heavy metals can be effectively performed at the rear surface of the substrate after the formation of a semiconductor element in the element formation region.
申请公布号 US4597166(A) 申请公布日期 1986.07.01
申请号 US19830464922 申请日期 1983.02.08
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 IWAI, HIROSHI
分类号 H01L29/78;H01L21/322;H01L29/06;(IPC1-7):H01L21/322;H01L21/461 主分类号 H01L29/78
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