发明名称 |
Method of depositing silicon films with reduced structural defects |
摘要 |
Silicon films in integrated circuits are mass produced with reduced structural defects by passing a reactant gas which contains silicon over a batch of wafers in a quartz chamber to deposit a silicon substance on both the wafers in a quartz chamber and the quartz walls of the chamber; repeating the passing step on other batches of wafers until the thickness of the silicon substance on the quartz walls exceeds a predetermined limit; directing a forceful stream of gas against the quartz walls to knock microscopic particles of the silicon substance therefrom; removing the knocked-off microscopic particles from the chamber; and continuing the passing and repeating steps with no intervening acid etch of the silicon substance on the quartz walls.
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申请公布号 |
US4597989(A) |
申请公布日期 |
1986.07.01 |
申请号 |
US19840635833 |
申请日期 |
1984.07.30 |
申请人 |
BURROUGHS CORPORATION |
发明人 |
WONSOWICZ, CASIMIR J.;CANFIELD, GLENN R. |
分类号 |
H01L21/205;C23C16/44;H01L21/31;(IPC1-7):B08B9/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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