| 摘要 |
PURPOSE:To decrease stress applied on an active layer, by forming a layer made of one material, which is selected among (GaAl)As, Ga(AsSb), or (InGa)As on a substrate, and forming a GaAlAs double heterostructure on the layer. CONSTITUTION:On a substrate, a layer made of one material selected among (GaAl)As, Ga(AsSb) or (InGa)As is formed. Multilayer films, having a GaAlAs double heterostructure is formed on said layer. For example, on a Ga1-xAlxAs mixed crystal substrate (0.02<=x<=0.4) 1, an N type Ga1-yAlyAs layer (0.5<=y<=0.8) 2, a Ga1-zAlzAs layer (0.15<=z<=0.35) 3, a P type Ga1-uAluAs layer (0.5<=u<=0.8)4 and P type GaAs layer 5 are grown by a liquid phase epitaxial method. Thereafter, a Zn diffused region 8, a P-side electrode 7 and an N-side electrode 6 are formed.
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