| 摘要 |
PURPOSE:To make it possible to read/write data even if bit lines are in a precharge period by connecting a latch type memory cell to respective bit lines. CONSTITUTION:A latch type memory cell 4 is constituted of flip-flop (FFs) using MOSFETs Q32, Q33. MOSFETs Q30, Q33 are transfer gates for connecting two nodes Ai, -Ai of the memory cell 4 with bit line BL, -BL respectively. The gates of MOSFETs Q30, Q31 which are used as transfer gates are con trolled by a clock phi4.
|
