发明名称 BIPOLAR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To suppress the parasitic effect in an integrated circuit due to parasitic elements to the minimum degree, by separating output stage transistors from a control circuit to a remote place, without increasing the chip area in the integrated circuit. CONSTITUTION:Output stage transistors are separated from a control transistor to a remote place without changing the total area of the flat surface of the layout pattern of an integrated circuit. For example, a control circuit 23 and output stage transistors 26 and 28 are separated at the upper side and the lower side of a chip. Therefore, a parasitic transistor 15 is hard to occur between a transistor 38 included in the control circuit and the output stage transistor 26. Even if the parasitic transistor 15 is yielded, the current amplification factor hFF of said transistor can be made small. Therefore, even if the parasitic transistor is yielded, the adverse effect of the parasitic transistor can be suppressed to the minimum degree.
申请公布号 JPS61142763(A) 申请公布日期 1986.06.30
申请号 JP19840264737 申请日期 1984.12.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 MOTOYOSHI HIROTO
分类号 H01L27/06;H01L21/76;H01L21/8222;H01L27/02;H01L27/082 主分类号 H01L27/06
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