| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor device, in which wiring defects do not occur in a lower wiring layer and an upper wiring layer and the miniaturized upper wiring layer is provided, by providing an insulating layer between the wiring layers having a laminated structure, wherein the lower layer is a heat resisting organic insulating layer and the upper layer is a plasma chemical vapor deposition inorganic insulating layer. CONSTITUTION:On a semiconductor substrate 1, a thermal oxide film 2, from which an impurity region is removed, is formed. A metal film (Al-Si) for a lower wiring layer is deposited on the film 2. Then etching is performed, and a first conducting metal layer 3 is formed. For example, a polyimide resin insulating material is applied on the entire surface, and a heat resisting organic insulating layer 5 is formed. A plasma excited vapor-deposition inorganic insulating layer 4 comprising a P-SiN film is formed on the layer 5. Then, the P-SiN film 4 and the polyimide film 5 are continuously etched, and a window 9 for connecting the upper and lower wirings is penetrated. Thereafter, a metal film (Al-Cu) for upper wiring layer is deposited on the surface of the inorganic insulating film 4. The window 9 is filled by the film at the same time. Selective etching is performed, and a minute second conducting metal layer 6, which is the upper wiring layer, is formed. |
