| 摘要 |
PURPOSE:To obtain a solid-state image pickup device having a large S/N ratio and a large amount of saturated light without reducing a light receiving area, by laminating an additional capacitor part at the lower part of a thin film light receiving element. CONSTITUTION:On an insulating substrate 101, the following parts are formed by ordinary forming method of a polycrystalline silicon TFT: a non-doped polycrystalline Si layer 102, a gate electrode 103, source and drain electrodes, an interlayer insulating film 104, a vertical line 105 and an interlayer insulating film 106. A contact hole is formed in the interlayer insulating film. A conducting thin film as an individual electrode 107 for forming an additional capacitor is formed. A dielectric thin film as an insulating film 108 or an oxide film, which is obtained by oxidizing the electrode 107, is formed. A common electrode 109 for a light receiving element is formed on the individual electrode 107 so as to hold said insulating film. The electrode 109 is commonly used as the common electrode for the additional capacitor. A light receiving thin film 10 is deposited. A contact hole and a transparent conducting thin film 111 are formed at the position of the individual electrode 107. An additional capacitor is provided at the lower part of the light receiving element in electrically parallel with the light receiving element. |
